首页 >2N3904S-RTK>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-92Plastic-EncapsulateTransistors Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistor | FS First Silicon Co., Ltd | FS | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance | KECKEC CORPORATION KEC株式会社 | KEC | ||
USMPACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARNPNTRANSISTOR GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNEPITAXIALPLANARTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
TheG2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheH2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | HSMC | ||
GeneralPurposeTransistorsNPNSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
NPNswitchingtransistor NPNswitchingtransistorinaTO-92;SOT54plasticpackage.PNPcomplement:2N3906. 1.Lowcurrent(max.200mA) 2.Lowvoltage(max.40V). | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TRANSISTOR(NPN) | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
14+无铅 |
SOT-23 |
25700 |
优势产品,博盛微热卖!!! |
询价 | ||
KEC |
22+ |
SOT-23 |
13568 |
实力现货,随便验! |
询价 | ||
KEC |
2008++ |
SOT-23 |
18200 |
新进库存/原装 |
询价 | ||
KEC |
05+ |
原厂原装 |
7051 |
只做全新原装真实现货供应 |
询价 | ||
KEC |
16+ |
SOT23 |
24000 |
原装现货假一罚十 |
询价 | ||
02+ |
1652 |
进口原装-真实库存-价实 |
询价 | ||||
KEC |
2020+ |
SOT-23 |
2400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
23+ |
N/A |
46080 |
正品授权货源可靠 |
询价 | |||
KEC |
22+ |
SOT-23 |
6000 |
特价原装现货,能提供更多数量 一片起订 |
询价 |
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