| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2N60 | 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
2N60 | N2 Amps竊?00Volts N-Channel MOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | |
2N60 | 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
2N60 | 600V N-Channel Power MOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | |
2N60 | N-CHANNEL POWER MOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
2N60 | N-Channel MOSFET Features ●RDS(ON)=3.8Ω@VGS=10V. ●Lowgatecharge(typical9.0nC). ●LowCrss(typical5.0pF). ●Fastswitchingcapability. ●Avalancheenergyspecified ●Improveddv/dtcapability. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
2N60 | 2A mps,600 Volts N-CHANNEL MOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 |  | |
2N60 | TO-251 Plastic-Encapsulate MOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | |
2N60 | N-CHANNEL MOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | |
2N60 | N-Channel Power MOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | |
2N60 | Fast Switching •FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N60 | Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
2N60 | 2A, 600V N-CHANNEL POWER MOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
2N60 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2N60 | N-CHANNEL MOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Ge-PNP
- 性质：
低频或音频放大 （LF）
- 封装形式：
直插封装
- 极限工作电压：
25V
- 最大电流允许值：
0.2A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX53A,
- 最大耗散功率：
- 放大倍数：
β=65
- 图片代号：
D-9
- vtest：
25
- htest：
999900
- atest：
.2
- wtest：
0
详细参数
- 型号：
2N60
- 制造商：
UTC-IC
- 制造商全称：
UTC-IC
- 功能描述：
MOS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-252 |
72500 |
自主品牌 量大可定 |
询价 | ||
GOODSEMI |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
BYD |
22+ |
TO-220 |
20 |
只做原装进口 免费送样!! |
询价 | ||
21+ |
no |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | |||
GOODSEMI |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
询价 | |||
FSC仙童 |
23+ |
TO-252/251 |
53000 |
一级分销商 |
询价 | ||
FCS |
2024+ |
TO-252 |
32560 |
原装优势绝对有货 |
询价 | ||
FAI |
13+ |
T0252 |
2500 |
原装现货价格有优势量大可以发货 |
询价 | ||
FCS原装正品 |
23+ |
TO251 |
12328 |
询价 | |||
FAIRCHIL |
23+ |
TO220-2 |
8500 |
全新原装现货,公司只做原装 |
询价 |
