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2N6051

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

文件:57.51 Kbytes 页数:2 Pages

MICREL

麦瑞半导体

2N6051

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

文件:57.55 Kbytes 页数:2 Pages

MICROSEMI

美高森美

2N6051

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

文件:195.37 Kbytes 页数:4 Pages

BOCA

博卡

2N6051

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

文件:495.5 Kbytes 页数:2 Pages

CENTRAL

2N6051

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件:188.54 Kbytes 页数:4 Pages

MOSPEC

统懋

2N6051

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

文件:223.22 Kbytes 页数:5 Pages

COMSET

2N6051

Power Transistors

Power Transistors

文件:347.98 Kbytes 页数:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2N6051

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gainhFE = 750 (Min) @ IC = -6A • Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) • Complement to type 2N6058 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications.

文件:146.28 Kbytes 页数:2 Pages

ISC

无锡固电

2N6051

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件:90.89 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6051

COLLECTOR-EMITTER VOLTAGE

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件:146.83 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

晶体管资料

  • 型号:

    2N6051

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    12A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    BDV66A,BDW84B,BDX64A,BDX66A,BDX88B,MJ4031,TIP646,

  • 最大耗散功率:

    150W

  • 放大倍数:

    β>750

  • 图片代号:

    E-44

  • vtest:

    80

  • htest:

    999900

  • atest:

    12

  • wtest:

    150

产品属性

  • 产品编号:

    2N6051

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 描述:

    PNP POWER TRANSISTOR SILICON AMP

供应商型号品牌批号封装库存备注价格
24+
TO-3
10000
全新
询价
MOTOROLA
24+/25+
19
原装正品现货库存价优
询价
MOTOROLA
24+
TO-3
1000
原装现货假一罚十
询价
MOTOROLA/摩托罗拉
专业铁帽
TO-3
1500
原装铁帽专营,代理渠道量大可订货
询价
MOTOROLA/摩托罗拉
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROSEMI
25+
SMD
96
就找我吧!--邀您体验愉快问购元件!
询价
MOT
25+
10
公司优势库存 热卖中!!
询价
CENTRAL
00+
TO-3
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Microsemi Corporation
2022+
-
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多2N6051供应商 更新时间2026-4-17 16:01:00