零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2N6052 | POWER TRANSISTORS(12A,150W) DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | MOSPEC MOSPEC | ||
2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors ...designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain— hFE=3500(Typ)@IC=5.0Adc •Collector−EmitterSustainingVoltage—@100mA VCEO(sus)=80Vdc(Min)—2N6058 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrelMicrel Semiconductor 麦瑞半导体麦克雷尔|麦瑞半导体 | ||
2N6052 | Power Transistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N6052 | POWER COMPLEMENTARY SILICON TRANSISTORS POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar | COMSET Comset Semiconductor | ||
2N6052 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS | bocaBoca semiconductor corporation 博卡博卡半导体公司 | ||
2N6052 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
2N6052 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
2N6052 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N6052 | Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W Description:AsiliconPNPDarlingtontransistorsinaTO-3typecasedesignedforgeneral-purposeamplifierandlow-frequencyapplications Features -HighDCCurrentGain -Collector-EmitterSustainingVoltage:Vced(sus)=100VMin@100mA -MonolithicConstructionwithBuit-inBase-Emitte | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N6052 | isc Silicon PNP Darlingtion Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2N6052 | Bipolar PNP Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB | ||
2N6052 | POWER COMPLEMENTARY SILICON TRANSISTORS | COMSET Comset Semiconductor | ||
2N6052 | Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6052 | Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6052 | 包装:散装 封装/外壳:TO-204AA,TO-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP DARL 100V 12A TO204 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6052 | 包装:散装 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:PNP POWER TRANSISTOR SILICON AMP | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | ||
Darlington Complementary Silicon Power Transistors DarlingtonComplementarySiliconPowerTransistors Thispackageisdesignedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain—hFE=3500(Typ)@IC=5.0Adc •Collector−EmitterSustainingVoltage—@100mAVCEO(sus)=100Vdc(Min) •M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-P+Darl+Di
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
100V
- 最大电流允许值:
12A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
2
- 可代换的型号:
BDV66A,BDW84C,BDX64B,BDX66B,BDX88C,MJ4032,TIP647,
- 最大耗散功率:
150W
- 放大倍数:
β>750
- 图片代号:
E-44
- vtest:
100
- htest:
999900
- atest:
12
- wtest:
150
产品属性
- 产品编号:
2N6052
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
3V @ 120mA,12A
- 电流 - 集电极截止(最大值):
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
750 @ 6A,3V
- 工作温度:
-65°C ~ 200°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-204AA,TO-3
- 供应商器件封装:
TO-204(TO-3)
- 描述:
TRANS PNP DARL 100V 12A TO204
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TO-3 |
10000 |
全新 |
询价 | ||||
ST |
1215+ |
TO-3 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 | ||
MOTO |
1635+ |
3 |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
MOTOROLA |
16+ |
TO-3 |
2000 |
原装现货假一罚十 |
询价 | ||
ON |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
MOT |
2020+ |
TO-3 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
23+ |
N/A |
45780 |
正品授权货源可靠 |
询价 | |||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
询价 |