Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W

Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte

文件：174.77 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Darlingtion Power Transistor

文件：146.53 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar PNP Device in a Hermetically sealed TO3

文件：16.329 Kbytes 页数：1 Pages

SEME-LAB

POWER COMPLEMENTARY SILICON TRANSISTORS

文件：80.97 Kbytes 页数：3 Pages

COMSET

Darlington Complementary Silicon Power Transistors

文件：130.66 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Darlington Complementary Silicon Power Transistors

文件：149.78 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Darlington PNP Silicon Power -80V to -100V, -12A

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows

Microchip

微芯科技

12 A, 100 V PNP Darlington Bipolar Power Transistor

This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications. • High DC Current GainhFE = 3500 (Typ) @ IC = 5.0 Adc\n• Collector-Emitter Sustaining Voltage— @ 100 mAVCEO(sus) = 80 Vdc (Min)—2N6058100 Vdc (Min)—2N6052, 2N6059\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistors\n• This is a Pb-Free Device;

ONSEMI

安森美半导体

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 12A TO204

ONSEMI

安森美半导体

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP POWER TRANSISTOR SILICON AMP

MICROCHIP

微芯科技