| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors ...designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain— hFE=3500(Typ)@IC=5.0Adc •Collector−EmitterSustainingVoltage—@100mA VCEO(sus)=80Vdc(Min)—2N6058 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR DESCRIPTION The2N6059isasiliconEpitaxial-BaseNPNtransistorinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Itisintededforuseinpowerlinearandlowfrequencyswitchingapplications. ■STMicrolectronicsPREFERREDSALESTYPE ■HIGHGAIN ■NPNDARL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
2N6059 | POWER TRANSISTORS(12A,150W) DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | MOSPEC MOSPEC |  | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS | bocaBoca semiconductor corporation 博卡博卡半导体公司 |  | |
2N6059 | NPN DARLINGTON POWER SILICON TRANSISTOR NPNDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/502 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
2N6059 | Power Transistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-3package ·Highgain ·Highcurrent ·Highdissipation ·Complementtotype2N5883/2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |  | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-3package ·Highcurrent;highdissipation ·DARLINGTON ·Complementtotype2N5883;2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications | SAVANTIC Savantic, Inc. |  | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar | COMSET Comset Semiconductor |  | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
2N6059 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6059 | NPN DARLINGTON TRANSISTOR DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR •HighCurrentCapability. •HermeticTO3Metalpackage. •ScreeningOptionsAvailable | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 |  | |
2N6059 | isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE =300(Min)@IC=5A ·Collector-EmitterSustainingVoltage- VCEO(SUS)=80V(Min) ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N6059 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | | |
2N6059 | Bipolar NPN Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB |  | |
2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR | SEME-LAB Seme LAB | | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS | COMSET Comset Semiconductor | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
12A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
BDV65A,BDW83C,BDX65B,BDX67B,BDX87C,FH9D,MJ4035,TIP141,TIP642,2SC1830,2SD685,
- 最大耗散功率：
150W
- 放大倍数：
β>750
- 图片代号：
E-44
- vtest：
100
- htest：
999900
- atest：
12
- wtest：
150
产品属性
- 产品编号：
2N6059
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
剪切带（CT）带盒（TB）
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
3V @ 120mA，12A
- 电流 - 集电极截止（最大值）：
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 6A，3V
- 频率 - 跃迁：
4MHz
- 工作温度：
200°C（TJ）
- 安装类型：
底座安装
- 封装/外壳：
TO-204AA，TO-3
- 供应商器件封装：
TO-3
- 描述：
TRANS NPN DARL 100V 12A TO3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2015+ |
3000 |
公司现货库存 |
询价 | ||||
2015+ |
3000 |
公司现货库存 |
询价 | ||||
TO-3 |
10000 |
全新 |
询价 | ||||
MOTOROLA |
1635+ |
6000 |
好渠道!好价格!一片起卖! |
询价 | |||
SOLIDSTATE |
490 |
原装正品现货供应 |
询价 | ||||
STM |
2020+ |
TO-3 |
75 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
STM |
2339+ |
N/A |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOTOROLA |
16+ |
TO-3 |
1000 |
原装现货假一罚十 |
询价 | ||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Central |
2000 |
TO-3 |
20 |
原装现货海量库存欢迎咨询 |
询价 |
