| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6059 | NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 文件：65.019 Kbytes 页数：2 Pages | MICROSEMI 美高森美 | MICROSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 文件：190.17 Kbytes 页数：6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS 文件：195.37 Kbytes 页数：4 Pages | BOCA 博卡 | BOCA | |
2N6059 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. 文件：495.5 Kbytes 页数：2 Pages | CENTRAL | CENTRAL | |
2N6059 | POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：188.54 Kbytes 页数：4 Pages | MOSPEC 统懋 | MOSPEC | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar 文件：223.22 Kbytes 页数：5 Pages | COMSET | COMSET | |
2N6059 | isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 300 (Min) @ IC = 5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amp 文件：294.98 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications 文件：114.5 Kbytes 页数：3 Pages | JMNIC 锦美电子 | JMNIC | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
12A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
BDV65A,BDW83C,BDX65B,BDX67B,BDX87C,FH9D,MJ4035,TIP141,TIP642,2SC1830,2SD685,
- 最大耗散功率：
150W
- 放大倍数：
β>750
- 图片代号：
E-44
- vtest：
100
- htest：
999900
- atest：
12
- wtest：
150
产品属性
- 产品编号：
2N6059
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
剪切带（CT）带盒（TB）
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
3V @ 120mA，12A
- 电流 - 集电极截止（最大值）：
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 6A，3V
- 频率 - 跃迁：
4MHz
- 工作温度：
200°C（TJ）
- 安装类型：
底座安装
- 封装/外壳：
TO-204AA，TO-3
- 供应商器件封装：
TO-3
- 描述：
TRANS NPN DARL 100V 12A TO3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
3000 |
公司现货库存 |
询价 | ||||
25+ |
3000 |
公司现货库存 |
询价 | ||||
STMicroelectronics |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
24+ |
TO-3 |
10000 |
全新 |
询价 | |||
SOLIDSTATE |
24+/25+ |
490 |
原装正品现货库存价优 |
询价 | |||
STM |
25+ |
TO-3 |
75 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
STM |
24+ |
N/A |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOTOROLA |
24+ |
TO-3 |
1000 |
原装现货假一罚十 |
询价 | ||
Central |
2000 |
TO-3 |
20 |
原装现货海量库存欢迎咨询 |
询价 | ||
MOTOROLA |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
询价 |
