N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.21513 Mbytes 页数：8 Pages

SUNMATE

森美特

2A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 2A,600V,RDS(ON)=4Ω @VGS=10V/1A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：201.04 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

文件：573.06 Kbytes 页数：5 Pages

ESTEK

伊泰克电子

Fast Switching

• FEATURES • Drain current: ID= 2A@ TC=25℃ • Drain source voltage: VDSS= 600V(Min) • Static drain-source on-resistance: RDS(on) = 5.0Ω (Max) • Fast switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switch

文件：157.55 Kbytes 页数：2 Pages

ISC

无锡固电

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

文件：142.66 Kbytes 页数：8 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

文件：224.53 Kbytes 页数：6 Pages

UTC

友顺

N-Channel MOSFET

Features ● RDS(ON) = 3.8 Ω @VGS = 10V. ● Low gate charge ( typical 9.0 nC). ● Low Crss ( typical 5.0 pF). ● Fast switching capability. ● Avalanche energy specified ● Improved dv/dt capability.

文件：60.51 Kbytes 页数：2 Pages

KEXIN

科信电子

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.99345 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

2A, 600V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes 页数：6 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件：316.23 Kbytes 页数：2 Pages

ISC

无锡固电