COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

文件：190.48 Kbytes 页数：4 Pages

BOCA

博卡

POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

文件：183.58 Kbytes 页数：4 Pages

MOSPEC

统懋

Bipolar Transistor

Description: High Power TO-3, PNP Transistor Features: • Low Collector Emitter Saturation Voltage : Vce(sat)1V Ic = 15A • High Current Gain-Bandwidth Product : ft = 4MHz (Min.) @ Ic = 1A • Low Leakage Current Icex = 1MA (Max.) at Rated Voltage • Excellent DC Current Gain hfe = 20 (Min.) @

文件：282.75 Kbytes 页数：2 Pages

MULTICOMP

易络盟

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

文件：132.1 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

文件：265.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·DC Current Gain- : hFE= 20-100 @IC= -10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applicati

文件：249.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 APPLICATIONS • They are intended for use in power linear and switching applications

文件：126.19 Kbytes 页数：3 Pages

JMNIC

锦美电子

POWER TRANSISTORS COMPLEMENTARY SILICON

... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

文件：190.04 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

文件：113.54 Kbytes 页数：3 Pages

SAVANTIC