EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：97.72 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\n● Low Leakage Current\n   : ICEX=50nA(Max.), IBL=50nA(Max.)\n     @VCE=30V, VEB=3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n   : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\n● Low Collector Output Capacitance\n   : Co ● Low Leakage Current\n   : ICEX=50nA(Max.), IBL=50nA(Max.)\n     @VCE=30V, VEB=3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n   : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\n● Low Collector Output Capacitance\n   : Cob=4pF(Max.) @VCB=5V.\n● Complementary to 2N3906V.;

KEC

NPN EPITAXIAL PLANAR TRANSISTOR

文件：129.72 Kbytes 页数：2 Pages

GTM

勤益投资控股

The G2N3904 is designed for general purpose switching and amplifier applications.

文件：131.64 Kbytes 页数：2 Pages

ETL

亚历电子

PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3904 is designed for general purpose switching and amplifier applications.

文件：36.38 Kbytes 页数：4 Pages

HSMC

华昕