20N

型号：MBC13720NT1；Package：SOT-363；SiGe:C Low Noise Amplifier with Bypass Switch

ETC

20N06

型号：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

20N06

型号：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

20N06

型号：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The20N06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

20N60A4D

型号：HGTG20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode

20N03L

型号：IPD20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOSBuckconverterseries Feature •N-Channel •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Idealforfastswitchingbuckconverters

20N03L

型号：IPD20N03LG；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature •N-Channel •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •175°Coperatingtemperature •dv/dtrated •Idealforfastswitchingbuckconverters •Pb.freeleadplating,RoHScompliant

20NP1006S

型号：NCE20NP1006S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE20NP1006Susesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=20V,ID=10A RDS(ON)

20N03L

型号：NTD20N03；Package：TO-252；30V N-Channel MOSFET

Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads •

20N03L

型号：NTD20N03L27T4G；Package：TO-252；30V N-Channel MOSFET

Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads •