20N06C

型号：NVMFS020N06CT1G；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

20N06W

型号：NVMFWS020N06CT1G；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

20NC

型号：NVTFS020N06CTAG；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

20NW

型号：NVTFWS020N06CTAG；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

20N1200

型号：RI20N1200TT；Package：TO-247；1200V/20A RC-IGBT

GeneralDescription DOSEMIIGBTPowerDiscreteprovidesultra lowconductionlossaswellaslowswitchingloss. Theyaredesignedfortheapplicationssuchas inductivecooking. Features LowVCE(sat)TrenchIGBTtechnology Lowswitchingloss Maximumjunctiontemperature175oC Lowinduc

20N150

型号：RM20N150LD；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

GeneralFeatures ●VDS=150V,ID=20A RDS(ON)=59mΩ(typical)@VGS=10V ●ExcellentgatechargexRDS(on)product(FOM) ●Verylowon-resistanceRDS(on) ●175°Coperatingtemperature ●Pb-freeleadplating ●100%UIStested

20N60

型号：RM20N60LDV；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

20N650

型号：RM20N650HD；Package：TO-220F；N Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UlraLowGateChargecauselowerdivingrequirements. 100%AvalancheTested ROHScompliant

20N650

型号：RM20N650T2；Package：TO-220；N Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UlraLowGateChargecauselowerdivingrequirements. 100%AvalancheTested ROHScompliant

20N650

型号：RM20N650TI；Package：TO-263；N Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UlraLowGateChargecauselowerdivingrequirements. 100%AvalancheTested ROHScompliant