SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

文件：67.75 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 8.5 mW TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mW TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mW TYP. (VGS = –4.0 V, ID = –6.0 A) · Low Ciss : Ciss = 3800 pF TYP. · Built-in G-S protect

文件：229.08 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

文件：67.75 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 8.5 mW TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mW TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mW TYP. (VGS = –4.0 V, ID = –6.0 A) · Low Ciss : Ciss = 3800 pF TYP. · Built-in G-S protect

文件：229.08 Kbytes 页数：10 Pages

RENESAS

瑞萨