SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TY

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TYP. •

文件：298.23 Kbytes 页数：10 Pages

RENESAS

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Power MOSFETs-Power MOSFETs for Automotive

Renesas

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High Power Attenuator

文件：132.21 Kbytes 页数：1 Pages

CPI