SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS

文件：58.96 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VG

文件：227.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VG

文件：227.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS

文件：58.96 Kbytes 页数：8 Pages

NEC

瑞萨