UPA1792G

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1792isN-andP-ChannelMOSFieldEffectTransistorsdesignedforMotorDriveapplicationofHDDandsoon. FEATURES •Lowon-resistance N-ChannelRDS(on)1=26mΩMAX.(VGS=10V,ID=3.4A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=3.4A)

UPA1792G

MOS FIELD EFFECT TRANSISTOR

FEATURES •Lowon-stateresistance N-channelRDS(on)1=26mΩMAX.(VGS=10V,ID=3.4A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=3.4A) RDS(on)3=42mΩMAX.(VGS=4.0V,ID=3.4A) P-channelRDS(on)1=36mΩMAX.(VGS=−10V,ID=−2.9A) RDS(on)2=54mΩMAX.(VGS=−4.5V,ID=−2.

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