P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on FEATURES • Can be driv

文件：68.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1854 is a switching device which can be driven directly by a 2.5-V power source. The μPA1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：230.8 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1854 is a switching device which can be driven directly by a 2.5-V power source. The μPA1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：230.8 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on FEATURES • Can be driv

文件：68.85 Kbytes 页数：8 Pages

NEC

瑞萨