N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V d

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RENESAS

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Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

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VBSEMI

微碧半导体

Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95

The UPA1970TE is a Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA1970 Data Sheet (G15;

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