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型号	下载订购	功能描述	制造商上传企业	LOGO
UPA1980	文件：79.94 Kbytes Page：8 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications s 文件：79.94 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
UPA1980	文件：215.97 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION The μ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applicatio 文件：215.97 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA1980	文件：300 bytes Page：1 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	Renesas 瑞萨	Renesas
UPA1980TE	文件：215.97 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION The μ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applicatio 文件：215.97 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA1980TE	文件：573.56 Kbytes Page：9 Pages	Dual P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch 文件：573.56 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
UPA1980TE	文件：79.94 Kbytes Page：8 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications s 文件：79.94 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
UPA1980TE	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas

技术参数

QG (nC) typ.：
2.3
Nch/Pch：
Pch
Vgs (off) (V) max.：
-1.5
Number of Channels：
Single
VGSS (V)：
8
Configuration [Device]：
Built-In SBD
Pch (W)：
0.57
VDSS (V) max.：
-20
Application：
Low Voltage General Switching
ID (A)：
-2
Mounting Type：
Surface Mount
RDS (ON) (mohm) max. @2.5V or 1.8V：
183
Package Type：
6pin TMM/SC-95
RDS (ON) (mohm) max. @4V or 4.5V：
135
Production Status：
Non-promotion
Ciss (pF) typ.：
272

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	UPA1980TE	NEC	24+		5000	有部份现货	询价
齐创科技(上海,北京,青岛)有限公司	UPA1980TE-T1	原厂正品	23+	SOT23-6	5000	原装正品,假一罚十	询价
深圳诚思涵科技有限公司	UPA1980TE-T1	NEC	19+	SOT-23-6	200000		询价
中天科工半导体（深圳）有限公司	UPA1980TE-T1	NEC	20+	SOT-23-6	36800	原装优势主营型号-可开原型号增税票	询价
深圳市宇创芯科技有限公司	UPA1980TE-T1-A	RENESAS/瑞萨	24+	SOT23-6	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	UPA1980TE-T1-A	RENESAS/瑞萨	23+	SOT23-6	50000	全新原装正品现货,支持订货	询价
深圳市英瑞尔电子科技有限公司	UPA1980TE-T2	NEC	24+	SOT-23-6	98000	原装现货假一赔十	询价
深圳市河锋鑫科技有限公司	UPA1980TE-T1-A	RENESAS/瑞萨	2016+PB	TSOP-6	6400	特价,大量供应	询价
深圳市威雅利发展有限公司	UPA1980TE-T1	NEC	02+	SOT163	3000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛美科科技有限公司	UPA1980TE-T1-A	RENESAS/瑞萨	新年份	TSOP-6	6400	原装正品大量现货,要多可发货,实单带接受价来谈!	询价

更多UPA1980供应商更新时间2026-1-17 10:20:00

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