P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dri

文件：71.89 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V

文件：206.73 Kbytes 页数：10 Pages

RENESAS

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Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Com - Bus Switch - Load Switchputers

文件：525.68 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFETs

Renesas

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