N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：61.25 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1900 is a switching device which can be driven directly by a 2.5 V power source. The μPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：197.08 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：61.25 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：TG；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1900 is a switching device which can be driven directly by a 2.5 V power source. The μPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：197.08 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：481.35 Kbytes 页数：9 Pages

VBSEMI

微碧半导体