P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

文件：73.02 Kbytes 页数：8 Pages

NEC

瑞萨

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.91 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe μPA1919 is a switching device, which can be driven directly by a 2. 5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A) RDS(on)3 = 84 mΩ MAX. (VGS = −2.5 V, ID = −3.0 A);

Renesas

瑞萨

KK Breakaway Vertical and Right Angle Header and Receptacle with Universal Crimp Tool

文件：40.45 Kbytes 页数：3 Pages

MOLEXKITS

莫仕

KK-156 Connector Kit Vertical and Right Angle Header and Receptacle, with Extraction and Universal Crimp Tool

文件：38.6 Kbytes 页数：2 Pages

MOLEXKITS

莫仕

Panel Mount Plug and Receptacle, with Extraction Tool and Universal Crimp Tool

文件：39.71 Kbytes 页数：3 Pages

MOLEXKITS

莫仕