N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：203.75 Kbytes 页数：10 Pages

RENESAS

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION\nThe µPA1901 is a switching device, which can be driven directly by a 2.5 V power source.\nThis device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.FEATURES\n• 2.5 V drive a • 2.5 V drive available\n• Low on-state resistance\n   RDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)\n   RDS(on)2 = 40 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)\n   RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) ;

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

文件：68.91 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：203.75 Kbytes 页数：10 Pages

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N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

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VBSEMI

微碧半导体

Nch Single Power Mosfet 30V 6.5A 39Mohm 6Pin Tmm/Sc-95

The UPA1901TE is a Nch Single Power Mosfet 30V 6.5A 39Mohm 6Pin Tmm/Sc-95. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA1901 Data Sheet (G158;

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