P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The μPA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

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VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dri

文件：73.02 Kbytes 页数：8 Pages

NEC

瑞萨

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe μPA1919 is a switching device, which can be driven directly by a 2. 5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A) RDS(on)3 = 84 mΩ MAX. (VGS = −2.5 V, ID = −3.0 A);

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