P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1911 is a switching device which can be driven directly by a 2.5-V power source. The μPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：230.84 Kbytes 页数：10 Pages

RENESAS

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911A is a switching device which can be driven directly by a 2.5 V power source. The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be d

文件：382.36 Kbytes 页数：8 Pages

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The µPA1911A is a switching device which can be driven directly by a 2.5 V power source. The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be d

文件：475.43 Kbytes 页数：10 Pages

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瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911A is a switching device which can be driven directly by a 2.5 V power source. The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be d

文件：382.36 Kbytes 页数：8 Pages

NEC

瑞萨

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.94 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.91 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：TC；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1911 is a switching device which can be driven directly by a 2.5-V power source. The μPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：230.84 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：65.78 Kbytes 页数：8 Pages

NEC

瑞萨