P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

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VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：71.85 Kbytes 页数：8 Pages

NEC

瑞萨

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe µPA1913 is a switching device which can be driven directly by a 2. 5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power • Can be driven by a 2.5-V power source\n• Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A) RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A);

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