P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES • 2.5

文件：75.59 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES •

文件：304.36 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES • 2.5

文件：75.59 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES •

文件：304.36 Kbytes 页数：10 Pages

RENESAS

瑞萨