N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870 is a switching device which can be driven directly by a 2.5-V power source. The μPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：290.75 Kbytes 页数：10 Pages

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870B is a switching device which can be driven directly by a 2.5 V power source. The μPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5

文件：215.83 Kbytes 页数：9 Pages

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

文件：85.32 Kbytes 页数：7 Pages

NEC

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Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：937.49 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

文件：85.32 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870B is a switching device which can be driven directly by a 2.5 V power source. The μPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5

文件：215.83 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870 is a switching device which can be driven directly by a 2.5-V power source. The μPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：290.75 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：82.4 Kbytes 页数：8 Pages

NEC

瑞萨