N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件：84.96 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：293.84 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1872B is a switching device, which can be driven directly by a 2.5 V power source. The μ PA1872B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2

文件：379.59 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1872B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA1872B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：165.38 Kbytes 页数：7 Pages

NEC

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1872B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA1872B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：165.38 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1872B is a switching device, which can be driven directly by a 2.5 V power source. The μ PA1872B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2

文件：379.59 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件：84.96 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：293.84 Kbytes 页数：10 Pages

RENESAS

瑞萨

Dual N-Channel 3 0-V (D-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：965.29 Kbytes 页数：8 Pages

VBSEMI

微碧半导体