N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：63.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Can be driven by a 4.0-V power source • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

文件：227.66 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：63.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Can be driven by a 4.0-V power source • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

文件：227.66 Kbytes 页数：10 Pages

RENESAS

瑞萨