SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (

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Old Company Name in Catalogs and Other Documents

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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters.FEATURES\n• Dual chip type\n• Low on-resistance\n   RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A)\n   RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A)\n   RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2. • Dual chip type\n• Low on-resistance\n   RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A)\n   RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A)\n   RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A)\n• Low input capacitance\n   Ciss = 870 pF TYP.\n• Built-in G-S protection diode\n• Small and surface;

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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nNch Dual Power MOSFET 60V 4. 5A 47. 0mohm Power SOP8 Automotive

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

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