SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES • Low on-resistance N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)

文件：104.72 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A) RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.

文件：326.3 Kbytes 页数：13 Pages

RENESAS

瑞萨

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES • Low on-resistance N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)

文件：104.72 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A) RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.

文件：326.3 Kbytes 页数：13 Pages

RENESAS

瑞萨