SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-and P-Channel MOS Field Effect Transistor designed for motor driver applications. FEATURES • Dual chip type • Low on-resistance N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A)

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES •Dual chip type • Low on-state resistance N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A) P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS = –10 V, ID = –0.35 A) RDS(on)2 = 0.74 Ω TYP. (VGS = –4 V, ID = –0.35 A) • Low input capacitance

文件：284.96 Kbytes 页数：16 Pages

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