SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

文件：66.29 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss : Ciss = 800 pF TYP. • Built-in G-S Protection Di

文件：294.09 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss : Ciss = 800 pF TYP. • Built-in G-S Protection Di

文件：294.09 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

文件：66.29 Kbytes 页数：8 Pages

NEC

瑞萨