UPA1720G

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A)

UPA1720G

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) •LowCiss:Ciss=800pFTYP. •Built-inG-SProtectionDi

VDA1720CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

VDA1720NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

WCS1720

HallEffectBaseLinearCurrentSensor