SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.

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MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP

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PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM/MW/LF TUNER CAR AUDIO

The µPD1723GF-013 and µPD1723GF-213 are CMOS LSI developed for worldwide PLL frequency synthesizer FM/MW/LW tuner use. Their package is a 64-pin QFP. On-chip PLL frequency synthesizer, controller, 200 MHz prescaler, LCD driver, and IF counter allow the construction of a compact FM/MW/LW tuner wit

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VOLTAGE REGULATOR

Voltage Regulator The MC1723C is a positive or negative voltage regulator designed to deliver load current to 150 mAdc. Output current capability can be increased to several amperes through use of one or more external pass transistors. MC1723C is specified for operation over the commercial te

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ONSEMI

安森美半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.

文件：64.42 Kbytes 页数：8 Pages

NEC

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