MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 460 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and

文件：306.66 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

文件：80.51 Kbytes 页数：7 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

Renesas

瑞萨

1742 18 GHz 1550 nm Microwave DFB Laser

文件：719.74 Kbytes 页数：4 Pages

EMCORE

Emcore Corporation

1742 18 GHz 1550 nm Microwave DFB Laser

文件：719.74 Kbytes 页数：4 Pages

EMCORE

Emcore Corporation

1742 18 GHz 1550 nm Microwave DFB Laser

文件：719.74 Kbytes 页数：4 Pages

EMCORE

Emcore Corporation