MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOSFET chips in small package • 4 V Gate Drive Type and Low On-Resistance RDS(on)1 = 37 mW Max. (VGS = 1

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Data Acquisition System Basis Chip

Features •Two high-precision 24-bit sigma-delta ADCs(18-bit with no missing codes);sample rate: 1Hz to 16kHz •On-chip voltage reference (5ppm/K typical) •Current channel IBAT offset error: ≤ 10mA IBAT resolution: ≤ 1mA Programmable gain: 4 to 512 Max. differential input stage input rang

文件：1.69512 Mbytes 页数：117 Pages

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Data Acquisition System Basis Chip

文件：1.40522 Mbytes 页数：116 Pages

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3M??Scotch-Weld??Epoxy Adhesive 1751 B/A

文件：140.65 Kbytes 页数：8 Pages

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Customer Specifications

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 14 (41/30) AWG Tinned Copper 0.070 b) Insulation 0.020 Wall, Nom. PVC 0.110 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 3.4

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LG LP097QX1 – iPad 3/4 Retina Display

文件：182.84 Kbytes 页数：2 Pages

ADAFRUIT