SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1= 30 mΩ MA

文件：64.099 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS

文件：230.49 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThis product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.FEATURES\n• Dual MOS FET chips in small package\n• 2.5-V gate drive type and low on-resistance\n  RDS(on)1= 30 mΩ MAX. (VGS= 4.5 V, • Dual MOS FET chips in small package\n• 2.5-V gate drive type and low on-resistance\n  RDS(on)1= 30 mΩ MAX. (VGS= 4.5 V, ID= 3.0 A)\n  RDS(on)2= 40 mΩ MAX. (VGS= 2.5 V, ID= 3.0 A)\n• Low CissCiss= 800 pF TYP.\n• Built-in G-S protection diode\n• Small and surface mount package (Power SOP8);

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS

文件：230.49 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1= 30 mΩ MA

文件：64.099 Kbytes 页数：8 Pages

NEC

瑞萨