SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A) • Low Ciss: Ciss = 2700 pF TYP. • Built

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.FEATURES\n• 2.5-V gate drive and low on-resistance\n   RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)\n • 2.5-V gate drive and low on-resistance\n   RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)\n   RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)\n• Low Ciss: Ciss = 2700 pF TYP.\n• Built-in G-S protection diodes\n• Small and surface mount pack;

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TI

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

文件：58.91 Kbytes 页数：8 Pages

NEC

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