SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A) • Low Ciss: Ciss = 2700 pF TYP. • Built

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.FEATURES\n• 2.5-V gate drive and low on-resistance\n   RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)\n • 2.5-V gate drive and low on-resistance\n   RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)\n   RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)\n• Low Ciss: Ciss = 2700 pF TYP.\n• Built-in G-S protection diodes\n• Small and surface mount pack;

Renesas

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Customer Specification

Construction Diameters (In) 1) Component 1 15 X 1 COND a) Conductor 20 (26/34) AWG Tinned Copper 0.038 b) Insulation 0.015 Wall, Nom. Polyethylene(PE) 0.068 (1) Color Code Alpha Wire Color Code H Cond Color Cond Color Cond Color 1 BLACK 6 BLUE 11 WHITE/BLACK 2 WHITE 7 BROWN 12 WHITE/RED 3

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