MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and

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SWITCHING N-CHANNEL POWER MOSFET

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NEC

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N-Channel 200 V (D-S) MOSFET

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VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOSFET

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