UPA1723

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.

UPA1723

MOS FIELD EFFECT TRANSISTOR

FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP

UPA1723G

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.

UPA1723G

MOS FIELD EFFECT TRANSISTOR

FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP

1723

CustomerSpecification

Construction Diameters(In) 1)Component112X1COND a)Conductor20(26/34)AWGTinnedCopper0.038 b)Insulation0.015Wall,Nom.Polyethylene(PE)0.068 (1)ColorCodeAlphaWireColorCodeH CondColorCondColorCondColor 1BLACK5YELLOW9SLATE 2WHITE6BLUE10VIOLET 3RED7BR

AIC1723

500mALowDropoutLinearRegulator

DESCRIPTION TheAIC1723isa3-pinlowdropoutlinearregulator.ThesuperiorcharacteristicsoftheAIC1723includezerobasecurrentloss,verylowdropoutvoltage,and2accuracyoutputvoltage.Typicalgroundcurrentremainsapproximately 65µA,fromnoloadtomaximumloadingconditions.

AIC1723A

500mALowDropoutLinearRegulator

AN1723

DesigningwiththeL5973ADhighefficiencyDC-DCconverter

AN1723

7020SR-32C2Series1RU(Gen3)DataCenterSwitches

APE1723

200KHz,1APWMBUCKDC/DCCONVERTER