SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.

文件：64.42 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP

文件：228.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP

文件：228.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.

文件：64.42 Kbytes 页数：8 Pages

NEC

瑞萨