SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

文件：66.67 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection d

文件：288.21 Kbytes 页数：10 Pages

RENESAS

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EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE POWER-SUPPLY USE)

HIGH-VOLTAGE SWITCHING TRANSISTOR ​​​​​​​TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage : VCEO=-600V • Low VCE(sat) (Typ. -0.25V((IC=-300mA, IB=-60mA). • Fast Switching. • Wide SOA.

文件：128.82 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Integrated Circuit Reversible Motor Driver for VCR

Features: • Supply Voltage Range: 6V to 18V • Power Dissipation: 2200mW • Output Motor Driving Current up to 1600mA • Two Control Logic Inputs Allow Switching of Three Output States: Forward Reverse Braking • Low Standby Current • Adjustable Output Voltage Enabl

文件：22.66 Kbytes 页数：3 Pages

NTE

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

文件：66.67 Kbytes 页数：8 Pages

NEC

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