SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) • Low Ciss : Ciss = 830

文件：65.43 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-state resistance RDS(on)1 = 33 mW MAX. (VGS = -10 V, ID = -3 A) RDS(on)2 = 59 mW MAX. (VGS = -4.5 V, ID = -3 A) · Low Ciss : Ciss = 830 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP

文件：291.34 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) • Low Ciss : Ciss = 830

文件：65.43 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-state resistance RDS(on)1 = 33 mW MAX. (VGS = -10 V, ID = -3 A) RDS(on)2 = 59 mW MAX. (VGS = -4.5 V, ID = -3 A) · Low Ciss : Ciss = 830 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP

文件：291.34 Kbytes 页数：10 Pages

RENESAS

瑞萨