SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

文件：66.78 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) • Low Ciss: Ciss = 2200 pF TYP. • Built-in G-S protection di

文件：227.46 Kbytes 页数：10 Pages

RENESAS

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) • Low Ciss: Ciss = 2200 pF TYP. • Built-in G-S protection di

文件：227.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

文件：66.78 Kbytes 页数：8 Pages

NEC

瑞萨