SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)

文件：65.94 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) • Low Ciss: Ciss = 980 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8)

文件：229.09 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) • Low Ciss: Ciss = 980 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8)

文件：229.09 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)

文件：65.94 Kbytes 页数：8 Pages

NEC

瑞萨