SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

文件：234.15 Kbytes 页数：10 Pages

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ETCList of Unclassifed Manufacturers

未分类制造商

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 24 (10/34) AWG Tinned Copper 0.024 b) Insulation 0.016 Wall, Nom. Polyethylene(PE) 0.056 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 2 BLACK 2) Cable Assembly 2 Components Cabled a) Twists: 8.0 Twists/foot (min)

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