650 V, 16 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

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650 V, 12A High surge Silicon Carbide power Schottky diode

The SiC diode STPSC16G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no re • No reverse recovery charge in application current range \n• High forward surge capability \n• ECOPACK2 compliant component;

ST

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丝印：PSC16G065D；Package：TO-220AC；650 V, 16 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

TO-247

ST

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原厂封装

ST

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