No or negligible reverse recovery

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STMICROELECTRONICS

意法半导体

丝印：STPSC20H12CWY；Package：TO-247；20 A 1200 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • OBC (On Board Battery chargers) • PHEV - EV charging s

文件：257.529 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

1200 V、20 A高浪涌碳化硅功率肖特基二极管

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high voltage periphery \n• Operating Tj from -40 °C to 175 °C \n• ECOPACK®2 compliant;

ST

意法半导体

20 A 1200 V 碳化硅功率肖特基二极管

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.\n\n Due to the Schottky construction, no recovery is • AEC-Q101 qualified \n• No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high-voltage periphery \n• PPAP capable \n• Operating Tj from -40 °C to 175 °C \n• ECOPACK2 compliant;

ST

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 1200V TO247

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：AUTOMOTIVE SIC DIODES

STMICROELECTRONICS

意法半导体