STPSC20H12CWY数据手册分立半导体产品的二极管-整流器-阵列规格书PDF

描述 Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

特性 Features

• AEC-Q101 qualified
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high-voltage periphery
• PPAP capable
• Operating Tj from -40 °C to 175 °C
• ECOPACK2 compliant

简介

STPSC20H12CWY属于分立半导体产品的二极管-整流器-阵列。由制造生产的STPSC20H12CWY二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。