SiC Schottky Diode

文件：400.91 Kbytes 页数：2 Pages

ISC

无锡固电

650 V power Schottky silicon carbide diode

文件：111.68 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Dedicated to PFC applications

文件：170.55 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Automotive 20 A 650 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • ECOPACK2 compliant component Description The STPSC20H065CWLY is an ultra-high-performance po

文件：255.96 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Dedicated to PFC applications

文件：156.72 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 650V TO247

STMICROELECTRONICS

意法半导体

Automotive 650V, 20A High Surge Silicon Carbide Power Schottky Diode

The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing • AEC-Q101 qualified \n• PPAP capable \n• No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Dedicated to PFC applications \n• High forward surge capability \n• ECOPACK2 compliant component;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY SIC 650V TO247

STMICROELECTRONICS

意法半导体